Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
- 30 September 2003
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 69 (2-4), 145-151
- https://doi.org/10.1016/s0167-9317(03)00291-0
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygenJournal of Applied Physics, 2002
- Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectricsJournal of Applied Physics, 2002
- Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer depositionApplied Physics Letters, 2002
- Compatibility Challenges for High-ĸ Materials Integration into CMOS TechnologyMRS Bulletin, 2002
- Deposition of HfO[sub 2] Thin Films in HfI[sub 4]-Based ProcessesJournal of the Electrochemical Society, 2002
- Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limitsJournal of Applied Physics, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealingApplied Physics Letters, 2000
- Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectricIEEE Electron Device Letters, 2000
- Hafnium and zirconium silicates for advanced gate dielectricsJournal of Applied Physics, 2000