High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
- 1 February 1998
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 264-268, 921-924
- https://doi.org/10.4028/www.scientific.net/msf.264-268.921