Damage induced in 100% internal carrier collection efficiency silicon photodiodes by 10-60 keV ion irradiation
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 45 (6), 2820-2825
- https://doi.org/10.1109/23.736534
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electronsIEEE Transactions on Nuclear Science, 1997
- Structural Transformations and Defect Production in Ion Implanted Silicon: A Molecular Dynamics Simulation StudyPhysical Review Letters, 1995
- One gigarad passivating nitrided oxides for 100% internal quantum efficiency silicon photodiodesIEEE Transactions on Nuclear Science, 1993