Fabrication of homoepitaxial ZnO films by low-temperature liquid-phase epitaxy
- 25 January 2006
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 287 (2), 367-371
- https://doi.org/10.1016/j.jcrysgro.2005.11.046
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Dopant Sources Choice for Formation of p-Type ZnO: Phosphorus Compound SourcesChemistry of Materials, 2005
- Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnONature Materials, 2004
- Low-temperature liquid-phase epitaxy and optical waveguiding of rare-earth-ion-doped KY(WO4)2 thin layersJournal of Crystal Growth, 2004
- Crystal chemistry of epitaxial ZnO on (111) MgAl2O4 produced by hydrothermal synthesisJournal of Crystal Growth, 2003
- Electrical and optical properties of ZnO transparent conducting films by the sol–gel methodJournal of Crystal Growth, 2003
- Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnOApplied Physics Letters, 2003
- High-quality langasite films grown by liquid phase epitaxyJournal of Crystal Growth, 2002
- Hydrogen as a Cause of Doping in Zinc OxidePhysical Review Letters, 2000
- Valence-band ordering in ZnOPhysical Review B, 1999
- Growth and Properties of Yttrium Iron Garnet Single-Crystal FilmsJournal of Applied Physics, 1965