Monocrystalline silicon carbide nanoelectromechanical systems
- 8 January 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (2), 162-164
- https://doi.org/10.1063/1.1338959
Abstract
SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators.Keywords
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