Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors

Abstract

The synthesis of high-quality In₂Se₃ nanowire arrays via thermal evaporation method and the photoconductive characteristics of In₂Se₃ individual nanowires are first investigated. The electrical characterization of a single In₂Se₃ nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In₂Se₃ nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In₂Se₃ nanowires in next-generation sensors and detectors for commercial, military, and space applications.