Electrical properties and transport in boron nitride nanotubes
- 9 June 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (23), 4131-4133
- https://doi.org/10.1063/1.1581370
Abstract
We have fabricated electronic devices based on single-walled boron nitride nanotubes (BNNTs). Our measurements indicate that all BNNTs are semiconducting, and p-doped. Temperature dependence of two terminal transport experiments suggests that at low drain fields, transport is dominated by thermionic emission over 250–300 meV Schottky contact barriers. Gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation.Keywords
This publication has 16 references indexed in Scilit:
- Field-Modulated Carrier Transport in Carbon Nanotube TransistorsPhysical Review Letters, 2002
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- Vertical scaling of carbon nanotube field-effect transistors using top gate electrodesApplied Physics Letters, 2002
- Catalyst-free synthesis of boron nitride single-wall nanotubes with a preferred zig-zag configurationPhysical Review B, 2001
- Study on electrical characteristics of metal/boron nitride/metal and boron nitride/silicon structuresDiamond and Related Materials, 2001
- Photogalvanic Effects in Heteropolar NanotubesPhysical Review Letters, 2000
- Role of Fermi-Level Pinning in Nanotube Schottky DiodesPhysical Review Letters, 2000
- Mass-production of boron nitride double-wall nanotubes and nanococoonsChemical Physics Letters, 2000
- Boron Nitride Nanotubes with Reduced Numbers of Layers Synthesized by Arc DischargePhysical Review Letters, 1996
- Theory of graphitic boron nitride nanotubesPhysical Review B, 1994