Ground state lasing at 1.34μm from InAs∕GaAs quantum dots grown by antimony-mediated metal organic chemical vapor deposition

Abstract

The authors report the fabrication of GaAs-based quantum dot (QD) lasers grown by metal organic chemical vapor deposition above $1.30\mu \mathrm{m}$ . They fabricated a laser diode with five stacked $\mathrm{In}\mathrm{As}∕\mathrm{Sb}:\mathrm{Ga}\mathrm{As}\left(100\right)$ QD layers, grown by antimony-surfactant-mediated growth. Ground state lasing was obtained at $1.34\mu \mathrm{m}$ , with internal quantum efficiency of 62%, internal loss of $4.5{\mathrm{cm}}^{-1}$ and ground state modal gain above $12{\mathrm{cm}}^{-1}$ . Lasing above $1.30\mu \mathrm{m}$ could be achieved because of the beneficial effects of antimony on both the coherent $\mathrm{In}\mathrm{As}∕\mathrm{Sb}:\mathrm{Ga}\mathrm{As}$ QD density and the suppression of the emission blueshift, usually observed for $\mathrm{In}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ QDs during postgrowth annealing at $600°\mathrm{C}$ .