Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach
- 31 July 1979
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 22 (7), 599-620
- https://doi.org/10.1016/0038-1101(79)90134-5
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Monte Carlo studies of hot-electron energy distribution in thin insulating films. I. Constant mean free path and a one-dimensional simulationJournal of Applied Physics, 1976
- Ionization coefficients in semiconductors: A nonlocalized propertyPhysical Review B, 1974
- Energy-Conservation Considerations in the Characterization of Impact Ionization in SemiconductorsPhysical Review B, 1972
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Calculation of distribution functions by exploiting the stability of the steady stateJournal of Physics and Chemistry of Solids, 1969
- Path Variable Formulation of the Hot Carrier ProblemPhysical Review B, 1967
- Maximum Anisotropy Approximation for Calculating Electron Distributions; Application to High Field Transport in SemiconductorsPhysical Review B, 1964
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Theory of Electron Multiplication in Silicon and GermaniumPhysical Review B, 1954