Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator
- 30 July 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (5), 659-661
- https://doi.org/10.1063/1.1379059
Abstract
In this letter, two organic thin-film transistors with SiO2 and ferroelectric PbZrTiO3 (PZT) gate insulator are compared. The fabrication of the devices is described and their electrical properties estimated. The PZT-based devices show better performance: Low driving voltage, high Ion/Ioff ratio, etc. Moreover, a memory effect is reported in correlation with ferroelectric properties of PZT thin films.Keywords
This publication has 15 references indexed in Scilit:
- Low-voltage 0.1 μm organic transistors and complementary inverter circuits fabricated with a low-cost form of near-field photolithographyApplied Physics Letters, 1999
- Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structureJournal of Applied Physics, 1999
- Gate voltage dependent mobility of oligothiophene field-effect transistorsJournal of Applied Physics, 1999
- Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate InsulatorsScience, 1999
- PbTiO 3 buffer layer effects on the structural and electrical properties of Pb(Zr, Ti)O3 thin films grown by sputtering on silicon substratesJournal of Vacuum Science & Technology A, 1998
- Theory of the field-effect mobility in amorphous organic transistorsPhysical Review B, 1998
- Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflectionJournal of Vacuum Science & Technology A, 1998
- Field-effect transistors made from solution-processed organic semiconductorsSynthetic Metals, 1997
- Experimental characterization and modeling of a ferroelectric bulk channel field effect transistor with nonvolatile memory characteristicsApplied Physics Letters, 1996
- An analytical model for organic-based thin-film transistorsJournal of Applied Physics, 1991