Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices
- 6 June 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (23), 3160-3162
- https://doi.org/10.1063/1.111325
Abstract
We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing the steady‐state photoconductive response to frequency‐doubled CO2 radiation, at intensities varying by over four orders of magnitude. Theoretical Auger rates were derived, based on a k⋅p calculation of the superlattice band structure in a model which employs no adjustable parameters. At 77 K, both experiment and theory yield Auger lifetimes which are approximately two orders of magnitude longer than those in Hg1−xCdxTe with the same energy gap. This finding has highly favorable implications for the application of InAs–Ga1−xInxSb superlattices to infrared detector and nonlinear optical devices.Keywords
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