Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices
- 27 August 2012
- journal article
- research article
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 12 (10), 4696-4702
- https://doi.org/10.1021/cg300779v
Abstract
No abstract availableKeywords
This publication has 42 references indexed in Scilit:
- Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary FormationJournal of the Electrochemical Society, 2012
- Nanometre-scale electronics with III–V compound semiconductorsNature, 2011
- Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistorsNature, 2010
- Heterogeneous Integration of Compound SemiconductorsAnnual Review of Materials Research, 2010
- Ultimate Scaling of CMOS Logic Devices with Ge and III–V MaterialsMRS Bulletin, 2009
- High-k/Ge MOSFETs for future nanoelectronicsMaterials Today, 2008
- High dielectric constant gate oxides for metal oxide Si transistorsReports on Progress in Physics, 2005
- Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressorsApplied Physics Letters, 2005
- Low dielectric constant materials for microelectronicsJournal of Applied Physics, 2003
- Wafer direct bonding: tailoring adhesion between brittle materialsMaterials Science and Engineering: R: Reports, 1999