Doping dependence of the Schottky-barrier height of Ti-Pt contacts to n-gallium arsenide

Abstract

The barrier height and ideality factor of Ti–Pt contacts on n‐type GaAs have been measured in the doping range N_d =3.3×10¹⁶ to 3×10¹⁸ cm⁻³. The flat‐band barrier height, determined from capacitance‐voltage measurements, is found to be independent of N_d whereas the effective barrier height for current transport, defined by the relation for thermionic emission, decreases rapidly at N_d >1×10¹⁸ cm⁻³. The results agree quite well with thermionic field‐emission theory.