Novel synaptic memory device for neuromorphic computing
Open Access
- 18 June 2014
- journal article
- Published by Springer Science and Business Media LLC in Scientific Reports
- Vol. 4 (1), 5333
- https://doi.org/10.1038/srep05333
Abstract
This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO2 material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20[emsp14]nm [times] 20[emsp14]nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed ~10[times] reduction in area and >106 times reduction in the power consumption per learning cycle.This publication has 30 references indexed in Scilit:
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