Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistors
- 20 August 2012
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 101 (8), 083305
- https://doi.org/10.1063/1.4747451
Abstract
The electron mobility was found to increase (decrease) upon applied compressive (tensile) strain, respectively, when a high-performance flexible -based organic field-effect transistor (OFET) was subjected to different bending radii. The observed almost twofold relative change in the electron mobility is considerably larger than that reported before for pentacene-based OFETs. Moreover, the strain dependency of electron mobility in films is strongly anisotropic with respect to the strain direction measured relative to the current flow. Analysis within a hopping-transport model for OFET mobility suggests that the observed strain dependency on electron transport is dominated mostly by the change of inter-grain coupling in polycrystalline films.
Keywords
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