Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
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- 10 July 2017
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 111 (2), 022104
- https://doi.org/10.1063/1.4993741
Abstract
GaN-based micro light-emitting diode (μLED) arrays are very promising devices for display applications. In these arrays, each μLED works as a single pixel of a whole image. The electro-optical performance of these μLEDs is an important subject to study. Here, we investigate the influence of LED size on the radiative and non-radiative recombination. The standard ABC model has been widely used to describe the efficiency of GaN based LEDs. Using this model, we extract A, B, and C coefficients for various LED sizes, showing how the competition between radiative and non-radiative recombination processes varies with the LED geometry. Time-resolved photoluminescence allows us to determine coefficient B, related to radiative recombination. Through current-voltage-luminance characterizations, we determine parameters A and C related to Shockley-Read-Hall and Auger recombination. We find that coefficient A is strongly dependent on LED size, indicating a drastic effect of sidewall defects on the performance of LEDs. On the other hand, coefficient C is independent of LED size. This latter result demonstrates that efficiency droop does not depend on LED size.Keywords
Funding Information
- Agence Nationale de la Recherche
This publication has 21 references indexed in Scilit:
- ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a reviewOptical and Quantum Electronics, 2015
- Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devicesNew Journal of Physics, 2013
- Efficiency droop in light‐emitting diodes: Challenges and countermeasuresLaser & Photonics Reviews, 2013
- Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodesApplied Physics Letters, 2012
- Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiencyApplied Physics Letters, 2012
- Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescenceApplied Physics Letters, 2012
- Droop in InGaN light-emitting diodes: A differential carrier lifetime analysisApplied Physics Letters, 2010
- Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodesJournal of Applied Physics, 2010
- On the origin of efficiency roll-off in InGaN-based light-emitting diodesJournal of Applied Physics, 2008
- Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodesJournal of Applied Physics, 2003