On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (3), 413-419
- https://doi.org/10.1109/16.275228
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- AC hot-carrier effects in scaled MOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injectionJournal of Applied Physics, 1993
- Influence of post-stress effects on the dynamic hot-carrier degradation behavior of passivated n-channel MOSFET'sIEEE Electron Device Letters, 1992
- Hot-Carrier Degradation During Dynamic StressPublished by Springer Science and Business Media LLC ,1992
- Recovery of hot-carrier damage in reoxidized nitrided oxide MOSFET'sIEEE Electron Device Letters, 1992
- Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2 layers using homogeneous nonavalanche injection of holesJournal of Applied Physics, 1990
- Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- The influence of the measurement setup on enhanced AC hot carrier degradation of MOSFETsIEEE Transactions on Electron Devices, 1990
- Passivation of paramagnetic Si-SiO2 interface states with molecular hydrogenApplied Physics Letters, 1988
- Dynamic stress experiments for understanding hot-carrier degradation phenomenaIEEE Transactions on Electron Devices, 1988