Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs
- 27 April 2015
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 33 (3)
- https://doi.org/10.1116/1.4919237
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing processJournal of Semiconductors, 2012
- Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structuresJournal of Vacuum Science & Technology B, 2011
- Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistorsJournal of Applied Physics, 2010
- 100 nm gate AlGaN/GaN HEMTs on silicon with fT=90 GHzElectronics Letters, 2009
- High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaNChinese Physics Letters, 2008
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004
- Etch rates for micromachining processing-part IIJournal of Microelectromechanical Systems, 2003
- Etch rates for micromachining processingJournal of Microelectromechanical Systems, 1996