Preparation and optical properties of InAs0.4P0.6nanocrystal alloy embedded in SiO2thin films
- 11 May 2001
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 16 (6), 507-510
- https://doi.org/10.1088/0268-1242/16/6/317
Abstract
InAs0.4P0.6 nanocrystals with a size of 4.3-6.5 nm embedded in SiO2 thin films were prepared by the radio-frequency magnetron co-sputtering technique. X-ray diffraction and Raman spectra strongly suggest the existence of InAs0.4P0.6 nanocrystals in SiO2 matrices. The size distribution of the nanocrystals was observed by transmission electron microscopy. The optical transmission spectra indicate that the optical absorption band edge of the composite thin films can be modulated in a very large wavelength range by changing the preparation conditions. The InAs0.4P0.6 nanocrystals exhibit the behaviour of a direct bandgap. The marked blue shift of the optical absorption edge with respect to the bulk semiconductor can be explained by the quantum confinement effect.Keywords
This publication has 21 references indexed in Scilit:
- InAs-doped silica films for saturable absorber applicationsApplied Physics Letters, 1999
- Preparation and optical absorption of InSb microcrystallites embedded in SiO2 thin filmsSolid State Communications, 1998
- Nonlinear optical properties of semiconductor nanocrystalsAdvances in Physics, 1998
- Growth and characterisation of cadmium sulphide nanocrystals embedded in silicon dioxide filmsThin Solid Films, 1998
- Quantum size effect of ZnSe microcrystal-doped SiO2 glass thin films prepared by RF-sputtering methodJournal of Materials Research, 1997
- Ultraviolet (340–390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrixApplied Physics Letters, 1997
- Visible photoluminescence from nanocrystallite Ge embedded in a glassymatrix: Evidence in support of the quantum-confinement mechanismPhysical Review B, 1995
- InAsyP1−y/InP multiple quantum well optical modulators for solid-state lasersApplied Physics Letters, 1991
- Observation of optical bistability in CdSXSe_1−X-doped glasses with 25-psec switching timeOptics Letters, 1987
- Degenerate four-wave mixing in semiconductor-doped glassesJournal of the Optical Society of America, 1983