Quantum confinement and strain effects in ZnSe-ZnSxSe1−x strained-layer superlattices
- 22 June 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (25), 1820-1822
- https://doi.org/10.1063/1.97708
Abstract
A photoluminescence study of ZnSe‐ZnSxSe1−x strained‐layer superlattices with x=0.19 grown by molecular beam epitaxy is presented. We observe clear shifts of the excitons to higher energies as the well widths are reduced. These shifts are interpreted in terms of quantum confinement effects using the envelope function approach and the strain‐induced effects using the deformation potential theory. From our analysis we conclude that most of the band offsets between ZnSe‐ZnSxSe1−x are taken up by the valence bands.Keywords
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