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Effect of Particle Size during Tungsten Chemical Mechanical Polishing
Home
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Effect of Particle Size during Tungsten Chemical Mechanical Polishing
Effect of Particle Size during Tungsten Chemical Mechanical Polishing
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M. Bielmann
M. Bielmann
UM
U. Mahajan
U. Mahajan
RS
R. K. Singh
R. K. Singh
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1 January 1999
journal article
Published by
The Electrochemical Society
in
Electrochemical and Solid-State Letters
Vol. 2
(8)
,
401-403
https://doi.org/10.1149/1.1390851
Abstract
The size of the abrasive particles plays a critical role in controlling the polishing rate and the surface roughness during chemical mechanical polishing of interconnect materials during semiconductor processing. Earlier reports on the effect of particle size on polishing in silica show contradictory conclusions. To the best of our knowledge, a systematic study of the effect of particle size on tungsten polishing has not been published. This paper describes the controlled measurements that were conducted to determine the effect of alumina particle size during polishing of tungsten. Alumina particles of similar phase and shape with size varying from 0.1 to diam were used in these experiments. The polishing experiments showed that the local roughness of the polished surfaces was insensitive to alumina particle size. The removal rate was found to increase with decreasing particle size and increased solids loading. These results suggest that the removal rate mechanism is not a scratching type process, but may be related to the contact surface area between particles and polished surface controlling the reaction rate. ©1999 The Electrochemical Society
Keywords
SURFACE ROUGHNESS
ALUMINA
PARTICLE SIZE
TUNGSTEN
POLISHING
REMOVAL RATE
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Cited by 121 articles