Argon Physisorption as Structural Probe for Endohedrally Doped Silicon Clusters
- 9 August 2007
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 99 (6), 063401
- https://doi.org/10.1103/physrevlett.99.063401
Abstract
We report on an element-dependent critical size for argon physisorption at 80 K on transition-metal-doped silicon clusters. Argon does not attach to elemental silicon clusters but only to surface-located transition-metal atoms. Thus physisorption provides structural information. Specifically, the minimal cluster size for the formation of endohedral singly metal-doped silicon cages has been determined. The observed critical size for doubly doped silicon clusters indicates that larger caged molecules can be formed, eventually leading to the growth of metal-doped silicon nanorods.Keywords
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