Doping and electrical properties of cubic boron nitride thin films: A critical review
- 1 October 2013
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 544, 2-12
- https://doi.org/10.1016/j.tsf.2013.07.001
Abstract
No abstract availableKeywords
Funding Information
- National Basic Research Program of China (973 Program) (2012CB619306)
- National Natural Science Foundation of China (51071145)
This publication has 84 references indexed in Scilit:
- The electrical properties of sulfur-implanted cubic boron nitride thin filmsChinese Physics B, 2012
- BN/ZnO heterojunction diodes with apparently giant ideality factorsJournal of Applied Physics, 2009
- Luminescence investigations of cubic boron nitride doped with berylliumPhysics of the Solid State, 2007
- Semiconducting properties of zinc-doped cubic boron nitride thin filmsJournal of Applied Physics, 2007
- Parameter spaces for the nucleation and the subsequent growth of cubic boron nitride filmsThin Solid Films, 2003
- Electrical properties and annealing effects on the stress of RF-sputtered c-BN filmsMaterials Letters, 2000
- Atomic geometry and energetics of vacancies and antisites in cubic boron nitrideApplied Physics Letters, 1999
- Crystallographic texture in cubic boron nitride thin filmsJournal of Applied Physics, 1996
- High pressure synthesis of semiconducting Be-doped polycrystalline cubic boron nitride and its electrical propertiesApplied Physics Letters, 1993
- Synthesis of the Cubic Form of Boron NitrideThe Journal of Chemical Physics, 1961