Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy
- 3 January 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 98 (1), 011111
- https://doi.org/10.1063/1.3534785
Abstract
Highly tensile-strained layers of Ge were grown via molecular beam epitaxy using step-graded buffer layers on (100) GaAs. These layers have biaxial tensile-strain of up to 2.33%, have surface roughness of , and are of high quality as seen with transmission electron microscopy. Low-temperature photoluminescence (PL) suggests the existence of direct-bandgap Ge when the strain is greater than 1.7%, and we see a greater than 100× increase in the PL intensity of the direct transition with 2.33% tensile-strain over the unstrained case. These results show promise for the use of tensile-strained Ge in optoelectronics monolithically integrated on Si.
Keywords
Funding Information
- Air Force Office of Scientific Research (FA9550-06-532)
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