Completely integrated contact-type linear image sensor

1 August 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (8), 1546-1550
https://doi.org/10.1109/t-ed.1985.22162

Abstract

A new contact-type linear image sensor has been developed, which integrates a-Si:H photodiode and poly-Si TFT driving circuits on a quartz substrate. The C-MOS shift register of poly-Si TFT can operate in the frequency range from dc to 2 MHz. The sensor contains 848 bits with the density of 8 bits/mm on the substrate of 2 × 125 mm size. A readout time of less than 1 µs, a S/N ratio higher than 40 dB, and a saturation exposure of 0.89 lx . s are obtained.

Keywords

SENSOR
CIRCUITS
FREQUENCY
PHOTODIODE
MOS
TFT
SHIFT
BITS
MHZ
POLY

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