Metal-containing fluoropolymer films produced by simultaneous plasma etching and polymerization: Effects of hydrogen or oxygen

Abstract

The formation of metal‐containing fluoropolymer films by simultaneous plasma etching and polymerization in a radiofrequency diode reactor configuration is investigated as a function of additive scavenger gases. The addition of oxygen to plasmas excited in tetrafluoroethylene or perfluoropropane is found to enhance the etching rate at the excitation metal electrode and diminish the polymer filmdeposition rate at the grounded electrode. The overall effect is to increase the metal content of the films. The addition of hydrogen to plasmas excited in tetrafluoromethane or perfluoropropane has the opposite effect. X‐ray photoelectron spectroscopy is employed to determine the composition and structure of the films, and this coupled with mass spectrometric analysis of the plasma gas phase chemistry has allowed the identification of the likely precursors to plasmapolymerization for the systems studied.