Design considerations for very high frequency dc-dc converters

Abstract

This document describes several aspects relating to the design of dc-dc converters operating at frequencies in the VHF range (30–300 MHz). Design considerations are treated in the context of a dc-dc converter operating at a switching frequency of 100 MHz. Gate drive, rectifier and control designs are explored in detail, and experimental measurements of the complete converter are presented that verify the design approach. The gate drive, a self-oscillating multi-resonant circuit, dramatically reduces the gating power while ensuring fast on-off transitions of the semiconductor switch. The rectifier is a resonant topology that absorbs diode parasitic capacitance and is designed to appear resistive at the switching frequency. The small sizes of the energy storage elements (inductors and capacitors) in this circuit permit rapid start-up and shut-down and a correspondingly high control bandwidth. These characteristics are exploited in a high bandwidth hysteretic control scheme that modulates the converter on and off at frequencies as high as 200 kHz.