Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures
- 24 August 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 69 (8), 1283-1286
- https://doi.org/10.1103/physrevlett.69.1283
Abstract
We examined band discontinuities in AlAs-Ge-GaAs(001) and GaAs-Ge-AlAs(001) single-quantum-well structures, as well as individual isolated Ge-GaAs(001), Ge-AlAs(001), GaAs-Ge(001), and AlAs-Ge(001) heterojunctions. We found that well-defined in- equivalent neutral interfaces are established in III-V/IV/III-V structures for Ge coverages as low as 1–2 monolayers. Deviations from the transitivity and commutativity rules of heterojunction behavior reflect inequivalent local interface environments rather than charged interfaces.Keywords
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