Effect of copper related defects on the electron transport properties of semi-insulating CdSe
- 11 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (15), 1234-1236
- https://doi.org/10.1063/1.99166
Abstract
Semi-insulating CdSe crystals with a reduced concentration of electron trapping centers have been grown and characterized. The existence of complex electron traps is attributed to the presence of trace copper impurity. The trap density, trap level depth, trapping time, cross section for trapping of electrons, and the electron mobility have been determined for the first time on one single CdSe crystal using the combination of space-charge-limited currents (SCLC’s) method, standard nuclear measurements, and the transient charge technique (TCT). The advantages for applications of semi-insulating CdSe as a novel material for spectrometer grade nuclear radiation detectors are emphasized.This publication has 15 references indexed in Scilit:
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