A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver
- 1 July 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 31 (7), 880-889
- https://doi.org/10.1109/4.508199
Abstract
An integrated low noise amplifier and downconversion mixer operating at 1 GHz has been fabricated for the first time in 1µm CMOS. The overall conversion gain at is almost 20 dB, the double-sideband noise figure is 3.2 dB, the IIP3 is +8 dBm, and the circuit takes 9 mA from a 3 V supply. Circuit design methods which exploit the features of CMOS well suited to these functions are in large part responsible for this performance. The front-end is also characterized in several other ways relevant to direct-conversion receivers.Keywords
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