Abnormal temperature behavior of photoluminescence from self-assembled InAs/AlAs quantum dots
- 15 October 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (16), 2564-2566
- https://doi.org/10.1063/1.1410332
Abstract
We report on the temperature dependence of photoluminescence (PL) from self-assembled InAs/AlAs quantum dots (QDs). In the temperature range of 6–90 K, an abnormal blueshift of the first excited-state emission and an enhancement of the ground-state PL are observed. This is explained by carrier transfer within spatially coupled QDs with a reduced barrier between, which give rise to a small activation energy of about 2 meV. Based on the analysis of the PL intensities, the rapid redshift of the ground- and excited-state emissions with respect to the InAs band gap in the temperature range of 90–283 K is explained by stepwise carrier escape from the QDs via the excited states.Keywords
This publication has 16 references indexed in Scilit:
- Short-wavelength laser diodes based on AlInAs/AlGaAs self-assembled quantum dotsJournal of Applied Physics, 2000
- Morphology of InAs self-organized islands on AlAs surfacesApplied Physics Letters, 1999
- Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layersApplied Physics Letters, 1999
- Temperature dependence of the optical properties of self-organized quantum dotsPhysical Review B, 1999
- Resonant magnetotunneling through individual self-assembled InAs quantum dotsPhysical Review B, 1996
- Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substratesPhysical Review B, 1996
- Temperature effects on the radiative recombination in self-assembled quantum dotsSurface Science, 1996
- Exciton localization and temperature stability in self-organized InAs quantum dotsApplied Physics Letters, 1996
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum DotsJapanese Journal of Applied Physics, 1995
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967