Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature
- 3 February 2021
- journal article
- research article
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 21 (3), 1645-1656
- https://doi.org/10.1021/acs.cgd.0c01485
Abstract
No abstract availableKeywords
Funding Information
- Directorate for Mathematical and Physical Sciences (CHE-1807755)
- Deutsche Forschungsgemeinschaft (Ma1618/18)
- German Federal Ministry for Science and Education (05K16FK2, 05K19K2)
This publication has 87 references indexed in Scilit:
- Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge NanowiresNano Letters, 2013
- Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactantsApplied Physics Letters, 2012
- Rheology of liquid metals and alloysJournal of Non-Newtonian Fluid Mechanics, 2011
- NucleationCrystal Growth & Design, 2010
- Surface tension of liquid metals and alloys — Recent developmentsAdvances in Colloid and Interface Science, 2010
- Atomic-Scale Surface Demixing in a Eutectic Liquid BiSn AlloyPhysical Review Letters, 2005
- Principles of Crystal Nucleation and GrowthReviews in Mineralogy and Geochemistry, 2003
- X-Ray Reflectivity Measurements of Surface Layering in Liquid MercuryPhysical Review Letters, 1995
- Structure Factor Determination in Surface X-ray DiffractionAustralian Journal of Physics, 1988
- The relationship between surface tension and energy of liquid metals and their heat of vaporization at the melting pointJournal of Inorganic and Nuclear Chemistry, 1964