Theoretical study on optimization criterion of the triple RESURF lateral power devices via virtual junction concept

Abstract
Triple Reduced Surface Field (RESURF) technique allows the drift region to achieve a much higher doping concentration while maintaining its breakdown voltage unaffected. Yet, as a result of the missing design guidance, the optimization of the Triple RESURF effect is difficult to be realized in practice. In light of that, in this paper, the Virtual Junction Concept is proposed to provide the optimization criterion and explore physical insight of the Triple RESURF effect. The proposed method bypasses the complicated 2-D analysis by equivalenting the 2-D drift region to a 1-D virtual graded junction. The effectiveness and correctness of such a method are validated by the good agreement between modeled and simulated results. Benefit from its simplicity and veracity, the proposed method can not only conduct qualitative and quantitative analysis on the Triple RESURF effect but also capable of providing design guidance and optimization criterion.
Funding Information
  • National Key Laboratory of Electronic Thin Films and Integrated Devices (KFJJ201907)
  • National Natural Science Foundation of China (61904083)
  • Natural Science Foundation of Jiangsu Province (BK20190237)