AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency
- 15 January 2021
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 60 (SB), SBBK02
- https://doi.org/10.35848/1347-4065/abd6e0
Abstract
The semiconductor photocathode with AlGaAs/GaAs superlattice structures, which is a highly durable electron beam source with low energy dispersion, were grown by molecular beam epitaxy. The sample showed a step-like quantum efficiency spectrum of photoelectron emission, indicating its applicability to photocathodes. The optimization of room temperature photoluminescence provides the improvement of the photocathode quantum efficiency up to 0.5%, promising for its further improvement and realistic applications.Keywords
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