Mg:TiO2 alloy thin films based MOS capacitors grown on GaAs substrates
- 13 February 2021
- journal article
- research article
- Published by Elsevier BV in Journal of Alloys and Compounds
- Vol. 868, 159178
- https://doi.org/10.1016/j.jallcom.2021.159178
Abstract
No abstract availableKeywords
Funding Information
- Science and Engineering Research Board
- MHRD
This publication has 52 references indexed in Scilit:
- Ultraviolet detection using TiO2 nanowire array with Ag Schottky contactJournal of Physics D: Applied Physics, 2012
- Transport and infrared photoresponse properties of InN nanorods/Si heterojunctionNanoscale Research Letters, 2011
- Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFETIEEE Transactions on Electron Devices, 2011
- GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performanceJournal of Physics D: Applied Physics, 2011
- Large constriction of lattice constant in epitaxial magnesium oxide thin film: Effect of point defects on lattice constantJournal of Applied Physics, 2010
- GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer depositionApplied Physics Letters, 2003
- The surface science of titanium dioxideSurface Science Reports, 2003
- Effects of Lanthanide Dopants on the Ferroelectric Property of Bi 4 Ti 3 O 12 Thin FilmsFerroelectrics, 2002
- A single-frequency approximation for interface-state density determinationSolid-State Electronics, 1980
- The Structures of Anatase and RutileJournal of the American Chemical Society, 1955