Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes
- 1 May 2020
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 30 (22)
- https://doi.org/10.1002/adfm.202001283
Abstract
No abstract availableFunding Information
- Science Challenge Project (TZ2016003)
- National Natural Science Foundation of China (61734001, 61521004, 61674010, 61674068)
- Natural Science Foundation of Beijing Municipality (JQ19004)
This publication has 38 references indexed in Scilit:
- One-step graphene coating of heteroepitaxial GaN filmsNanotechnology, 2012
- High-quality GaN films grown on chemical vapor-deposited graphene filmsNPG Asia Materials, 2012
- Layered boron nitride as a release layer for mechanical transfer of GaN-based devicesNature, 2012
- Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodesApplied Physics Letters, 2012
- Flexible Inorganic Nanostructure Light‐Emitting Diodes Fabricated on Graphene FilmsAdvanced Materials, 2011
- Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic DevicesScience, 2010
- Improved hydrogen detection sensitivity in N-polar GaN Schottky diodesApplied Physics Letters, 2009
- Polarity control of GaN grown on sapphire substrate by RF-MBEJournal of Crystal Growth, 2001
- Reactivity and morphology of $(10overline{12})$-faceted and (3 × 3)-reconstructed GaN(0001bar) epilayers grown on sapphire(0001)Journal of Physics: Condensed Matter, 1999
- Reconstructions of theSurfacePhysical Review Letters, 1997