Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films
- 1 June 2021
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Nano Materials
- Vol. 4 (6), 5685-5695
- https://doi.org/10.1021/acsanm.1c00298
Abstract
No abstract availableFunding Information
- University of California, Riverside
- Basic Energy Sciences (SC0012670)
- Office of Integrative Activities (1937155, 2040620)
- Division of Materials Research (0958796)
This publication has 68 references indexed in Scilit:
- Electron Tunneling through Ultrathin Boron Nitride Crystalline BarriersNano Letters, 2012
- Impacts of Temperature and Frequency on the Dielectric Properties for Insight into the Nature of the Charge Transports in the Tl2S Layered Single CrystalsJournal of Modern Physics, 2011
- Resistance modulation of multilayer graphene controlled by the gate electric fieldSemiconductor Science and Technology, 2010
- Oxidation kinetics forand the structure of the oxide layersPhysical Review B, 2007
- -monolayer adsorption on thesurface: A density functional studyPhysical Review B, 2006
- Contacting organic molecules by metal evaporationPhysical Chemistry Chemical Physics, 2004
- Electronic, optical, and structural properties of some wurtzite crystalsPhysical Review B, 1993
- The temperature coefficient of capacitanceJournal of Physics D: Applied Physics, 1968
- Capacitance of Thin Dielectric StructuresJournal of Applied Physics, 1964
- Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963