Band structure engineering in gallium sulfide nanostructures
- 20 January 2021
- journal article
- research article
- Published by Springer Science and Business Media LLC in Applied Physics A
- Vol. 127 (2), 1-9
- https://doi.org/10.1007/s00339-020-04184-z
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible SubstratesNano Letters, 2013
- GaS and GaSe Ultrathin Layer TransistorsAdvanced Materials, 2012
- Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si SubstratesAdvanced Functional Materials, 2012
- First principles calculations of the electronic and chemical properties of graphene, graphane, and graphene oxideJournal of Molecular Modeling, 2010
- Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride LayersNano Letters, 2010
- Vapor−Solid Growth of One-Dimensional Layer-Structured Gallium Sulfide NanostructuresACS Nano, 2009
- Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap OpeningACS Nano, 2008
- Strain-engineered photoluminescence of silicon nanoclustersPhysical Review B, 2006
- Generalized Gradient Approximation Made SimplePhysical Review Letters, 1996
- Projector augmented-wave methodPhysical Review B, 1994