Significant Performance Improvement of Oxide Thin-Film Transistors by a Self-Assembled Monolayer Treatment
Open Access
- 1 May 2020
- journal article
- research article
- Published by Wiley in Advanced Electronic Materials
- Vol. 6 (5)
- https://doi.org/10.1002/aelm.201901421
Abstract
No abstract availableFunding Information
- National Basic Research Program of China (2016YFA0301200)
- National Natural Science Foundation of China (11374185, 11304180)
- Engineering and Physical Sciences Research Council (EP/N021258/1, EP/L01548X/1)
This publication has 40 references indexed in Scilit:
- Laser ablation of amorphous indium gallium zinc oxide films deposited by different RF powersMicroelectronic Engineering, 2012
- The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistorsApplied Physics Letters, 2012
- Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectricSolid-State Electronics, 2009
- 42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFTSID Symposium Digest of Technical Papers, 2008
- Al2O3 as gate dielectric for organic transistors: Charge transport phenomena in poly-(3-hexylthiophene) based devicesOrganic Electronics, 2008
- Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistorsApplied Physics Letters, 2008
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Surface-treatment effects on organic thin-film transistorsSynthetic Metals, 2005
- Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect TransistorsNano Letters, 2003
- Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transportJournal of Applied Physics, 2003