Synthesis and photoluminescence of high density GeSe triangular nanoplate arrays on Si substrates
- 3 April 2020
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 31 (28), 285702
- https://doi.org/10.1088/1361-6528/ab8668
Abstract
We have grown germanium selenide (GeSe) triangular nanoplate arrays (TNAs) with a high density (3.82 × 106 / mm2) on the Si (111) substrate using a simple thermal evaporation method. The thickness and trilateral lengths of a single triangular nanoplate were statistically estimated by atomic force microscopy (AFM) as 44 nm, 365 nm, 458 nm and 605 nm, respectively. Transmission electron microscopy (TEM) images and X-ray diffraction (XRD) patterns show that the TNAs were composed of single crystalline GeSe phase. The Se-related defects in the lattice were also revealed by TEM images and Raman vibration modes. Unlike previously reported GeSe compounds, the GeSe TNAs exhibited temperature-dependent photoluminescence (PL). The PL peak (1.25 eV) of the TNAs at 5 K was in the gaps between those of GeSe monolayers and a few hundred thick films, revealing a close relationship between the PL peak and the thickness of GeSe. The high-density structure and temperature-dependent PL of the TNAs on the Si substrate may be useful for temperature controllable semiconductor nanodevices.Keywords
Funding Information
- National Key R&D Program of China (2017YFB0405702)
- National Natural Science Foundation of China (51672179)
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