Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress*
- 29 January 2021
- journal article
- research article
- Published by IOP Publishing in Chinese Physics B
- Vol. 30 (7), 077305
- https://doi.org/10.1088/1674-1056/abe117
Abstract
The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor (MOS-HEMT) is compared with that of conventional high electron mobility transistor (HEMT) under direct current (DC) stress, and the degradation mechanism is studied. Under the channel hot electron injection stress, the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer, and that under the gate dielectric of the device. The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress, which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel. However, because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel, the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT. The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection.Keywords
This publication has 30 references indexed in Scilit:
- Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTsMicroelectronic Engineering, 2017
- Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plateChinese Physics B, 2016
- High-field-induced electron detrapping in an AlGaN/GaN high electron mobility transistorChinese Physics B, 2012
- Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mappingApplied Physics Letters, 2012
- Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer depositionJournal of Applied Physics, 2010
- 光腔衰荡光谱技术研究AsH2自由基: <italic>Ã</italic><sup>2</sup><italic>A</italic><sub>1</sub>(000)−X<sup>~2</sup><italic>B</italic><sub>1</sub>(000)Chinese Science Bulletin (Chinese Version), 2009
- Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systemsMicroelectronics Reliability, 2009
- Carrier and Doping DensityPublished by Wiley ,2005
- Electrical bias stress related degradation of AlGaN∕GaN HEMTsElectronics Letters, 2003
- Very-high power density AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001