Emission properties of intrinsic and extrinsic defects in Cu2SnS3 thin films and solar cells
- 18 December 2020
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 60 (1), 015504
- https://doi.org/10.35848/1347-4065/abcf06
Abstract
Intrinsic and extrinsic defects around the p–n interface in CTS solar cells were evaluated using low-temperature photoluminescence (LT-PL) measurements. The intrinsic defects were investigated based on the dependence of PL spectra of CTS films on the excitation power and temperature. Donor–acceptor pair recombination was observed with shallow acceptors (copper vacancies, VCu) located approximately 18 meV above the valence band maximum and typical donors located 72 and 112 meV below the conduction band minimum (CBM). The PL spectra of various CTS solar cell structures were measured to identify the Cd-related defects in CTS formed by Cd diffusion from CdS layer. A new LT-PL peak was observed at 0.87 eV for the CdS/CTS solar cells, corresponding to D–A pair recombination with Cd on Cu site donors located 62 meV below the CBM. A p–n homojunction may form in CTS by the passivation of VCu by Cd diffusion and suppression of interface recombination.Keywords
Funding Information
- Japan Society for the Promotion of Science (20J13953)
This publication has 57 references indexed in Scilit:
- Fabrication of Cu2SnS3 thin films by sulfurization of evaporated Cu‐Sn precursors for solar cellsphysica status solidi (c), 2013
- Effect of sodium diffusion on the structural and electrical properties of Cu2ZnSnS4 thin filmsSolar Energy Materials and Solar Cells, 2011
- A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursorsJournal of Physics D: Applied Physics, 2010
- Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin filmsJournal of Applied Physics, 2009
- Long lifetimes in high-efficiency Cu(In,Ga)Se2 solar cellsApplied Physics Letters, 2008
- Annealing effects on Zn1−xMgxO/CIGS interfaces characterized by ultraviolet light excited time-resolved photoluminescenceSolar Energy Materials and Solar Cells, 2008
- Prospects for in situ junction formation in CuInSe2 based solar cellsSolar Energy Materials and Solar Cells, 1998
- Anomalous temperature-dependent band gaps instudied by surface-barrier electroreflectancePhysical Review B, 1988
- Radiative recombination in melt-grown and Cd-implanted CuInSe2Journal of Applied Physics, 1976
- Dependence of the Peak Energy of the Pair-Photoluminescence Band on Excitation IntensityPhysical Review B, 1972