Controllable p-to-n Type Conductance Transition in Top-Gated Graphene Field Effect Transistor by Interface Trap Engineering
- 1 September 2020
- journal article
- research article
- Published by Wiley in Advanced Electronic Materials
- Vol. 6 (9)
- https://doi.org/10.1002/aelm.202000496
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China (61704189)
- Youth Innovation Promotion Association of the Chinese Academy of Sciences
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