Si-based light emitters synthesized with Ge+ ion bombardment

Abstract

The photoluminescence (PL) of Ge/Si nanostructures synthesized by using Ge${}^{+}$ ion bombardment is studied. The structure represents a Si substrate with GeSi nanoclusters created by 80 keV Ge implantation with a fluence of $\sim {10}^{15}$ ions/cm${}^2$ and subsequent thermal annealing. The PL measurements confirm the advantage of Ge/Si structures synthesized using Ge${}^{+}$ ion bombardment over the usual epitaxial structures with GeSi quantum dots. The presence of defects produced by Ge implantation results in pronounced PL at telecom wavelengths up to room temperature. The results provide a basis for creating efficient light emitters compatible with the existing Si technology.