Resistance switching behaviors of continuous-thick hBN films fabricated by radio-frequency-sputtering
- 12 November 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Materials Research
- Vol. 35 (23-24), 3247-3256
- https://doi.org/10.1557/jmr.2020.315
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Photo-stimulated resistive switching of ZnO nanorodsNanotechnology, 2012
- Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene ElectronicsNano Letters, 2012
- Flexible Organic Memory Devices with Multilayer Graphene ElectrodesACS Nano, 2011
- Direct Growth of Graphene/Hexagonal Boron Nitride Stacked LayersNano Letters, 2011
- Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3 Thin Films for Low Cost Nonvolatile MemoriesNano Letters, 2010
- Metallopolymers with emerging applicationsMaterials Today, 2008
- CMOS Compatible Nanoscale Nonvolatile Resistance Switching MemoryNano Letters, 2008
- Nanoionics-based resistive switching memoriesNature Materials, 2007
- Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric PressureScience, 2007
- Light scattering study of boron nitride microcrystalsPhysical Review B, 1981