Room-temperature valleytronic transistor

Abstract

Valleytronics, based on the valley degree of freedom rather than charge, is a promising candidate for next-generation information devices beyond complementary metal-oxide-semiconductor (CMOS) technology(1-4). Although many intriguing valleytronic properties have been explored based on excitonic injection or the non-local response of transverse current schemes at low temperature(4-7), demonstrations of valleytronic building blocks similar to transistors in electronics, especially at room temperature, remain elusive. Here, we report a solid-state device that enables a full sequence of generating, propagating, detecting and manipulating valley information at room temperature. Chiral nanocrescent plasmonic antennae(8)are used to selectively generate valley-polarized carriers in MoS(2)through hot-electron injection under linearly polarized infrared excitation. These long-lived valley-polarized free carriers can be detected in a valley Hall configuration(9-11)even without charge current, and can propagate over 18 mu m by means of drift. In addition, electrostatic gating allows us to modulate the magnitude of the valley Hall voltage. The electrical valley Hall output could drive the valley manipulation of a cascaded stage, rendering the device able to serve as a transistor free of charge current with pure valleytronic input/output. Our results demonstrate the possibility of encoding and processing information by valley degree of freedom, and provide a universal strategy to study the Berry curvature dipole in quantum materials. A MoS(2)transistor with chiral nanocrescent plasmonic antennae enables the generation, propagation, detection and manipulation of valley information at room temperature.