Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs
- 23 February 2021
- journal article
- research article
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 21 (4), 2068-2075
- https://doi.org/10.1021/acs.cgd.0c01498
Abstract
No abstract availableKeywords
Funding Information
- Irish Higher Education Authority Program, IPIC, Science Foundation Ireland, Irish Research Council (12/RC/2276, 12/RC/2276_P2, 15/IA/2864, EPSPG/2014/35)
This publication has 29 references indexed in Scilit:
- Electrically pumped continuous-wave III–V quantum dot lasers on siliconNature Photonics, 2016
- High performance continuous wave 1.3 μm quantum dot lasers on siliconApplied Physics Letters, 2014
- High-Characteristic-Temperature 1.3-$\mu$m-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone MethodIEEE Journal of Selected Topics in Quantum Electronics, 2007
- Highly strained 1.24-μm InGaAs/GaAs quantum-well lasersApplied Physics Letters, 2003
- GaAs-based long-wavelength lasersSemiconductor Science and Technology, 2000
- Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasersIEEE Photonics Technology Letters, 1998
- High-temperature operation of 1.3 [micro sign]m AlGaInAs strained multiple quantum well lasersElectronics Letters, 1998
- Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrateIEEE Photonics Technology Letters, 1994
- Theoretical gain of strained quantum well grown on an InGaAs ternary substrateApplied Physics Letters, 1993
- High temperature characteristics of InGaAsP/InP laser structuresApplied Physics Letters, 1993