Light reflectance and photoelectron yield spectroscopy enable acceptor level measurement in p-type Ba1−xTiO3 semiconductor
- 25 February 2021
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 129 (8), 084105
- https://doi.org/10.1063/5.0033761
Abstract
We report the band structure of Ba-deficient BaTiO3 as a p-type semiconductor, studied by a combination of light reflectance and photoelectron yield spectroscopy. Two acceptor levels were observed at the tail of a valence band. As the quantity of Ba vacancies increased, the density of state of the two acceptor levels also increased. The levels of the conduction band minimum and the valence band maximum shifted far away from the vacuum level, but the bandgap seems to be independent of Ba deficient concentration. For classical semiconductors such as Si and GaAs, the observation of impurity levels is restricted to low temperatures (∼20 K) owing to their narrow bandgaps. Oxide semiconductors have now been demonstrated with wide bandgaps and acceptor levels, at normal operating temperatures, which could lead to new device designs in the future.Keywords
Funding Information
- Japan Society for the Promotion of Science (JP19K05271)
- Adaptable and Seamless Technology Transfer Program through Target-Driven R and D (JPMJTM19DB)
This publication has 32 references indexed in Scilit:
- Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO3Scientific Reports, 2020
- Enhanced ferroelectric photovoltaic response of BiFeO3/BaTiO3 multilayered structureJournal of Applied Physics, 2015
- BaTiO3 Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional DevicesACS Applied Materials & Interfaces, 2013
- Beyond the barrierNature Materials, 2013
- Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctionsNature Materials, 2013
- Kinetic study of Cu(II) adsorption on nanosized BaTiO3 and SrTiO3 photocatalystsJournal of Hazardous Materials, 2011
- Giant tunnel electroresistance for non-destructive readout of ferroelectric statesNature, 2009
- Photocatalytic Activities of Heterojunction Semiconductors Bi2O3/BaTiO3: A Strategy for the Design of Efficient Combined PhotocatalystsThe Journal of Physical Chemistry C, 2007
- Optical Band Gap of Barium Titanate Nanoparticles Prepared by RF-plasma Chemical Vapor DepositionJapanese Journal of Applied Physics, 2005
- Ferroelectric Schottky DiodePhysical Review Letters, 1994