Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI
Open Access
- 21 July 2021
- journal article
- research article
- Published by MDPI AG in Applied Sciences
- Vol. 11 (15), 6708
- https://doi.org/10.3390/app11156708
Abstract
This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 GHz to 30 GHz, with dB of maximum gain. The maximum RF (radio frequency) output power (Pout), power-added efficiency (PAE) and output 1 dB compression point are dBm, 29% and dBm, respectively, achieved at 24 GHz. The error vector magnitude (EVM) of % was measured at an average channel power of dBm at the center of the the 3GPP/NR (third generation partnership project/new radio) FR2 band n258—i.e., 26 GHz—using a 100 MHz 16-quadrature amplitude modulation (QAM) 3GPP/NR orthogonal frequency division modulation (OFDM) signal.
Funding Information
- Academy of Finland (323779, 318927)
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