Optically Induced Phase Change for Magnetoresistance Modulation
- 9 January 2020
- journal article
- research article
- Published by Wiley in Advanced Quantum Technologies
- Vol. 3 (3)
- https://doi.org/10.1002/qute.201900104
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (51602013, 11804016, 61704005, 61571023)
- China Postdoctoral Science Foundation (2018M631296)
- Fundamental Research Funds for the Central Universities
- Postdoctoral Research Foundation of China (2018M631296)
This publication has 44 references indexed in Scilit:
- A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctionNature Materials, 2010
- Large voltage-induced magnetic anisotropy change in a few atomic layers of ironNature Nanotechnology, 2009
- The emergence of spin electronics in data storageNature Materials, 2007
- Coherent Structural Dynamics and Electronic Correlations during an Ultrafast Insulator-to-Metal Phase Transition inPhysical Review Letters, 2007
- Multiferroics: progress and prospects in thin filmsNature Materials, 2007
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- Metal-insulator transitionsReviews of Modern Physics, 1998
- Semiconductor photonic integrated circuitsIEEE Journal of Quantum Electronics, 1991
- Picosecond optoelectronic switching and gating in siliconApplied Physics Letters, 1975
- Zero Magnetostriction Composition of NiFe FilmsJournal of Applied Physics, 1967